Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy
Identifieur interne : 015F96 ( Main/Repository ); précédent : 015F95; suivant : 015F97Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy
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Abstract
A series of growths conducted at different substrate temperatures and V:III ratios is analyzed by x-ray diffraction to determine composition. A metastable InAsN alloy plus pure InAs are obtained for temperatures in the range 450-500 °C and total V:III ratio of approximately unity. The InAs fraction in the alloy phase increases at lower temperatures, the maximum observed is 13%. For higher temperatures or higher V:III ratio only separated phases of InAs and InN are found. © 1998 American Vacuum Society.
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Stevens</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Box D, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Box D, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Schwartzman, A F" uniqKey="Schwartzman A">A. F. Schwartzman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Box D, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Box D, Brown University, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0461846</idno><date when="1998-05">1998-05</date><idno type="stanalyst">PASCAL 98-0461846 AIP</idno><idno type="RBID">Pascal:98-0461846</idno><idno type="wicri:Area/Main/Corpus">016404</idno><idno type="wicri:Area/Main/Repository">015F96</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal microstructure</term><term>Crystallites</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Lattice parameters</term><term>Molecular beam epitaxy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>TEM</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115H</term><term>6855N</term><term>8105E</term><term>6855J</term><term>Etude expérimentale</term><term>Indium composé</term><term>Epitaxie jet moléculaire</term><term>Couche épitaxique semiconductrice</term><term>Semiconducteur III-V</term><term>Diffraction RX</term><term>Paramètre cristallin</term><term>Croissance semiconducteur</term><term>TEM</term><term>Cristallite</term><term>Microstructure cristalline</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A series of growths conducted at different substrate temperatures and V:III ratios is analyzed by x-ray diffraction to determine composition. A metastable InAsN alloy plus pure InAs are obtained for temperatures in the range 450-500 °C and total V:III ratio of approximately unity. The InAs fraction in the alloy phase increases at lower temperatures, the maximum observed is 13%. For higher temperatures or higher V:III ratio only separated phases of InAs and InN are found. © 1998 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>BERESFORD (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>STEVENS (K. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHWARTZMAN (A. 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